GUWAHATI: A team of researchers led by Ankush Bag, Assistant Professor in the Department of Electronics and Electrical Engineering and Centre for Nanotechnology at the Indian Institute of Technology (IIT), Guwahati, has made a significant breakthrough by developing a cost-effective method to grow a special semiconductor.
Collaborating with IIT Mandi and the Institute of Sensor and Actuator Systems, Technical University Wien, the team's innovation has the potential to significantly enhance the efficiency of power electronics in applications such as electric vehicles, high-voltage transmission, traction, and industrial automation.
The semiconductor, identified as gallium oxide, has been developed through an innovative and cost-effective technology utilizing a customized low-pressure chemical vapor deposition (LPCVD) system. This development is anticipated to find widespread use as it enables high-power devices to function efficiently even at exceptionally high temperatures, reaching up to 200 ºC.
Highlighting the significance of this research, Bag stated, "Power Semiconductor devices are the heart of every power electronic system, functioning primarily as efficient switches. For emerging high-power applications, there is a demand for compound semiconductor materials with an ultra-wide bandgap."
Bag explained the challenges faced during the research, stating, "The main challenge was to make thin and smooth films out of the material. After multiple trials and rigorous study, we optimized the gallium oxide semiconductor and incorporated it with tin to improve and modulate its conductivity."
The applications of this groundbreaking technology extend to electric vehicles, high voltage transmission, traction systems, and industrial automation. The team's research has been published in multiple research papers in reputable journals, including the IEEE Transactions on Electron Devices and Thin Solid Films.
Bag emphasised the uniqueness of their approach, noting, "A key challenge of this research was creating a Gallium oxide thin film on a sapphire substrate, deviating from the common use of Gallium oxide substrates. This shift enhances cost-effectiveness and thermal performance, addressing issues related to the expense and poor thermal conductivity of Gallium oxide substrates."
The pioneering research received funding from the Science and Engineering Research Board (SERB), Department of Science and Technology.
